US Patent 7763577 Acidic post-CMP cleaning composition
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Patent abstract
An acidic post-CMP cleaning composition includes at least one polyamino-polycarboxylic acid, or salt thereof; at least one hydroxycarboxylic acid, or salt thereof; and the remainder being substantially water. The acidic cleaning composition also includes a surfactant. The acidic post-CMP cleaning composition has a pH of 1 to 5, and is useful for removing the contaminants from the wafer surface after a CMP process without making roughness worse.
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US Patent 07763577 Acidic post-CMP cleaning composition US Patent 7763577 Acidic post-CMP cleaning composition
Infobox
Patent Number
0776357700
Patent Number
776357700
Edits on 30 Mar, 2023
Golden AI
Infobox
Is a
Patent Jurisdiction
Patent Number
077635770
Date of Patent
July 27, 2010
0Patent Application Number
123943900
Date Filed
February 27, 2009
0Official Website
Patent Primary Examiner
Edits on 25 Sep, 2022
Golden AI
Infobox
Is a
Patent Jurisdiction
Patent Number
077635770
Date of Patent
July 27, 2010
0Patent Application Number
123943900
Date Filed
February 27, 2009
0Official Website
Patent Primary Examiner
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US Patent 07763577 Acidic post-CMP cleaning composition
Infobox
Is a
Patent jurisdiction
Patent number
07763577
Date of patent
July 27, 2010
Patent application number
12394390
Date Filed
February 27, 2009
Patent primary examiner
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