Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
August 3, 2010
Patent Application Number
12538008
Date Filed
August 7, 2009
Patent Primary Examiner
Patent abstract
A method of manufacturing an integrated circuit (IC) can utilize a shallow trench isolation (STI) technique. The shallow trench isolation technique can be used in an IC process. Separate liners for the trench are used for NMOS and PMOS regions. The liners can induce strain in the substrate.
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