Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Mei Sheng Zhou0
Alex K H See0
Jin Ping Liu0
Liang Choo Hsia0
Date of Patent
August 17, 2010
0Patent Application Number
120257880
Date Filed
February 5, 2008
0Patent Primary Examiner
Patent abstract
A transistor device structure comprising: a substrate portion formed from a first material; and a source region, a drain region and a channel region formed in said substrate, the source and drain regions comprising a plurality of islands of a second material different from the first material, the islands being arranged to induce a strain in said channel region of the substrate.
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