US Patent 7776699 Strained channel transistor structure and method
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Patent abstract
A transistor device structure comprising: a substrate portion formed from a first material; and a source region, a drain region and a channel region formed in said substrate, the source and drain regions comprising a plurality of islands of a second material different from the first material, the islands being arranged to induce a strain in said channel region of the substrate.
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Patent Inventor Names
Alex K H See0
Jin Ping Liu0
Liang Choo Hsia0
Mei Sheng Zhou0
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US Patent 07776699 Strained channel transistor structure and method US Patent 7776699 Strained channel transistor structure and method
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Patent Number
077766990
Patent Number
77766990
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Patent Jurisdiction
Patent Number
077766990
Date of Patent
August 17, 2010
0Patent Application Number
120257880
Date Filed
February 5, 2008
0Official Website
Patent Primary Examiner
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US Patent 07776699 Strained channel transistor structure and method
Infobox
Is a
Patent jurisdiction
Patent number
07776699
Date of patent
August 17, 2010
Patent application number
12025788
Date Filed
February 5, 2008
Patent primary examiner
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