Patent 7781150 was granted and assigned to Industrial Technology Research Institute on August, 2010 by the United States Patent and Trademark Office.
A method of photolithographic exposure is disclosed. The photolithographic exposure method comprises providing a substrate, forming a first resist layer thereon, forming a second resist layer on the first resist layer, the second resist layer providing a transmission which first increases then decreases as exposure dose increases, and exposing the second resist layer.