Patent 7781887 was granted and assigned to Infineon Technologies on August, 2010 by the United States Patent and Trademark Office.
A semiconductor device includes a first die, a substrate, and a first interconnect. The first die includes a first isolation region and a first contact at least partially overlapping the first isolation region. The substrate includes a second contact. The first interconnect couples the first contact to the second contact. The first interconnect is defined by a via through the first isolation region.