US Patent 7790487 Method for fabricating photo sensor
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Patent abstract
A method for fabricating a photo sensor on an amorphous silicon thin film transistor panel includes forming a photo sensor with a bottom electrode, a silicon-rich dielectric layer, and a top electrode, such that the light sensor has a high reliability. The fabrication method is compatible with the fabrication process of a thin film transistor.
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Patent Inventor Names
An-Thung Cho0
Chia-Tien Peng0
Ching-Chieh Shih0
Kun-Chih Lin0
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US Patent 07790487 Method for fabricating photo sensor US Patent 7790487 Method for fabricating photo sensor
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Patent Number
077904870
Patent Number
77904870
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Patent Jurisdiction
Patent Number
077904870
Date of Patent
September 7, 2010
0Patent Application Number
122111060
Date Filed
September 16, 2008
0Official Website
Patent Primary Examiner
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US Patent 07790487 Method for fabricating photo sensor
Infobox
Is a
Patent jurisdiction
Patent number
07790487
Date of patent
September 7, 2010
Patent application number
12211106
Date Filed
September 16, 2008
Patent primary examiner
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