Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Tomohiro Okamura0
Date of Patent
September 7, 2010
0Patent Application Number
115112770
Date Filed
August 29, 2006
0Patent Primary Examiner
Patent abstract
A method for fabricating a semiconductor device includes: providing a semiconductor substrate; forming a STI region on the semiconductor substrate; forming a channel region on the semiconductor substrate; implanting impurities into the STI region; and performing a thermal treatment to diffuse impurities to a side of the channel region.
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