Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Toshihide Kikkawa0
Masahito Kanamura0
Date of Patent
September 21, 2010
0Patent Application Number
120687960
Date Filed
February 12, 2008
0Patent Primary Examiner
Patent abstract
In an MIS-type GaN-FET, a base layer made of a conductive nitride including no oxygen, here, TaN, is provided on a surface layer as a nitride semiconductor layer to cover at least an area of a lower face of a gate insulation film made of Ta2O5 under a gate electrode.
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