US Patent 7800133 Semiconductor device and manufacturing method of the same
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Patent abstract
In an MIS-type GaN-FET, a base layer made of a conductive nitride including no oxygen, here, TaN, is provided on a surface layer as a nitride semiconductor layer to cover at least an area of a lower face of a gate insulation film made of Ta2O5 under a gate electrode.
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Patent Inventor Names
Masahito Kanamura0
Toshihide Kikkawa0
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US Patent 07800133 Semiconductor device and manufacturing method of the same US Patent 7800133 Semiconductor device and manufacturing method of the same
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Patent Number
078001330
Patent Number
78001330
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Patent Jurisdiction
Patent Number
078001330
Date of Patent
September 21, 2010
0Patent Application Number
120687960
Date Filed
February 12, 2008
0Official Website
Patent Primary Examiner
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US Patent 07800133 Semiconductor device and manufacturing method of the same
Infobox
Is a
Patent jurisdiction
Patent number
07800133
Date of patent
September 21, 2010
Patent application number
12068796
Date Filed
February 12, 2008
Patent primary examiner
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