Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Yasuyuki Fukuda0
Naoya Tokiwa0
Satoru Takase0
Tsuneo Inaba0
Hideo Mukai0
Hiroshi Maejima0
Katsuaki Isobe0
Date of Patent
September 21, 2010
Patent Application Number
12252675
Date Filed
October 16, 2008
Patent Primary Examiner
Patent abstract
A resistance change memory device including memory cells arranged, the memory cell having a stable state with a high resistance value and storing in a non-volatile manner such multi-level data that at least three resistance values, R0, R1 and R2 (R0<R1<R2) are selectively set, wherein resistance gaps ΔR1(=R1−R0) and ΔR2(=R2−R1) are set to satisfy the relationship of ΔR1>ΔR2.
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