US Patent 7800935 Resistance change memory device
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Patent abstract
A resistance change memory device including memory cells arranged, the memory cell having a stable state with a high resistance value and storing in a non-volatile manner such multi-level data that at least three resistance values, R0, R1 and R2 (R0<R1<R2) are selectively set, wherein resistance gaps ΔR1(=R1−R0) and ΔR2(=R2−R1) are set to satisfy the relationship of ΔR1>ΔR2.
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Patent Inventor Names
Hideo Mukai0
Hiroshi Maejima0
Katsuaki Isobe0
Naoya Tokiwa0
Satoru Takase0
Tsuneo Inaba0
Yasuyuki Fukuda0
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US Patent 07800935 Resistance change memory device US Patent 7800935 Resistance change memory device
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Patent Number
07800935
Patent Number
7800935
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US Patent 07800935 Resistance change memory device
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Is a
Patent jurisdiction
Patent number
07800935
Date of patent
September 21, 2010
Patent application number
12252675
Date Filed
October 16, 2008
Patent primary examiner
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