US Patent 7804145 Semiconductor device, capacitor, and field effect transistor

It is made possible to provide a semiconductor device that has the effective work function of the connected metal optimized at the interface between a semiconductor and the metal. A semiconductor device includes: a semiconductor film; an oxide film formed on the semiconductor film, the oxide film including at least one of Hf and Zr, and at least one element selected from the group consisting of V, Cr, Mn, Nb, Mo, Tc, W, and Re being added to the oxide film; and a metal film formed on the oxide film.