US Patent 7804870 Semiconductor optical device and manufacturing method thereof
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Patent abstract
In a p-type clad layer, not only a p-type dopant Zn but also Fe is doped. Its Zn concentration is 1.5×1018 cm−3 and the Fe concentration is 1.8×1017 cm−3. In a semi-insulating burying layer, Fe is doped as an impurity generating a deep acceptor level and the concentration thereof is 6.0×1016 cm−3. The Fe concentration in the p-type clad layer is thus three times higher than the Fe concentration in the burying layer.
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US Patent 07804870 Semiconductor optical device and manufacturing method thereof US Patent 7804870 Semiconductor optical device and manufacturing method thereof
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Patent Number
0780487000
Patent Number
780487000
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Patent Jurisdiction
Patent Number
078048700
Date of Patent
September 28, 2010
0Patent Application Number
120532130
Date Filed
March 21, 2008
0Official Website
Patent Primary Examiner
Edits on 25 Sep, 2022
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Infobox
Is a
Patent Jurisdiction
Patent Number
078048700
Date of Patent
September 28, 2010
0Patent Application Number
120532130
Date Filed
March 21, 2008
0Official Website
Patent Primary Examiner
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US Patent 07804870 Semiconductor optical device and manufacturing method thereof
Infobox
Is a
Patent jurisdiction
Patent number
07804870
Date of patent
September 28, 2010
Patent application number
12053213
Date Filed
March 21, 2008
Patent primary examiner
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