Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
October 12, 2010
Patent Application Number
11691011
Date Filed
March 26, 2007
Patent Citations Received
Patent Primary Examiner
Patent abstract
A plasma etching apparatus is arranged to perform main etching for etching a poly-crystalline silicon film by use of Cl2/SF6/N2 plasma obtained by exciting Cl2 gas, SF6 gas, and N2 gas, and over etching for etching the poly-crystalline silicon film by use of Cl2/HBr/CF4 plasma obtained by exciting Cl2 gas, HBr gas, and CF4 gas. In the main etching, N2 gas is added to suppress formation of roughness on a poly-crystalline silicon surface and attain a sufficient etching rate.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
