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US Patent 7811939 Plasma etching method

Patent 7811939 was granted and assigned to Tokyo Electron on October, 2010 by the United States Patent and Trademark Office.

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US Patent 11978613 Transition control in a bias supply
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US Patent 11942309 Bias supply with resonant switching
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US Patent 11842884 Spatial monitoring and control of plasma processing environments
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Patent abstract

A plasma etching apparatus is arranged to perform main etching for etching a poly-crystalline silicon film by use of Cl2/SF6/N2 plasma obtained by exciting Cl2 gas, SF6 gas, and N2 gas, and over etching for etching the poly-crystalline silicon film by use of Cl2/HBr/CF4 plasma obtained by exciting Cl2 gas, HBr gas, and CF4 gas. In the main etching, N2 gas is added to suppress formation of roughness on a poly-crystalline silicon surface and attain a sufficient etching rate.

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US Patent 11670487 Bias supply control and data processing
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https://pdfpiw.uspto.gov/.piw?Docid=0781193900
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US Patent 07811939 Plasma etching method US Patent 7811939 Plasma etching method

Infobox
Patent Number
0781193900
Patent Number
781193900
Edits on 27 Mar, 2023
"Entity importer update"
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Infobox
Is a
Patent
Patent
0
Current Assignee
Tokyo Electron
Tokyo Electron
0
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
0
Patent Number
078119390
Date of Patent
October 12, 2010
0
Patent Application Number
116910110
Date Filed
March 26, 2007
0
Official Website
https://pdfpiw.uspto.gov/.piw?Docid=078119390
Patent Primary Examiner
‌
Roberts Culbert
0
Edits on 28 Sep, 2022
"Entity importer update"
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edited on 28 Sep, 2022
Infobox
Is a
Patent
Patent
0
Current Assignee
Tokyo Electron
Tokyo Electron
0
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
0
Patent Number
078119390
Date of Patent
October 12, 2010
0
Patent Application Number
116910110
Date Filed
March 26, 2007
0
Official Website
https://pdfpiw.uspto.gov/.piw?Docid=078119390
Patent Primary Examiner
‌
Roberts Culbert
0
Edits on 3 Jun, 2022
"Entity importer update"
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Website URL
https://pdfpiw.uspto.gov/.piw?Docid=07811939
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 US Patent 07811939 Plasma etching method

Infobox
Is a
Patent
Patent
Current assignee
Tokyo Electron
Tokyo Electron
Patent jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent number
07811939
Date of patent
October 12, 2010
Patent application number
11691011
Date Filed
March 26, 2007
Patent primary examiner
‌
Roberts Culbert

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