US Patent 7820527 Cleave initiation using varying ion implant dose
Patent 7820527 was granted and assigned to Varian Semiconductor Equipment Associates on October, 2010 by the United States Patent and Trademark Office.
All edits
An approach for providing a cleave initiation using a varying ion implant dose is described. In one embodiment, there is a method of forming a substrate. In this embodiment, a semiconductor material is provided and implanted with a spatially varying dose of one or more ion species. A handler substrate is attached to the implanted semiconductor material. A cleave of the implanted semiconductor material is initiated from the handler substrate at a preferential location that is a function of a dose gradient that develops from the spatially varying dose of one or more ion species implanted into the semiconductor material.
US Patent 07820527 Cleave initiation using varying ion implant dose US Patent 7820527 Cleave initiation using varying ion implant dose
US Patent 07820527 Cleave initiation using varying ion implant dose
Find more entities like US Patent 7820527 Cleave initiation using varying ion implant dose
