Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
November 2, 2010
Patent Application Number
12079036
Date Filed
March 24, 2008
Patent Primary Examiner
Patent abstract
A magnetic memory or MRAM memory system comprising an M×N crossbar array of MRAM cells. Each memory cell stores binary data bits with switchable magnetoresistive tunnel junctions (MJT) where the electrical conductance changes as the magnetic moment of one electrode (the storage layer) in the MJT switches direction. The switching of the magnetic moment is assisted by a phase transition interlayer that transitions from antiferromagnetic to ferromagnetic at a well defined, above ambient temperature.
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