US Patent 7826258 Crossbar diode-switched magnetoresistive random access memory system
Patent 7826258 was granted and assigned to Carnegie Mellon University on November, 2010 by the United States Patent and Trademark Office.
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Patent abstract
A magnetic memory or MRAM memory system comprising an M×N crossbar array of MRAM cells. Each memory cell stores binary data bits with switchable magnetoresistive tunnel junctions (MJT) where the electrical conductance changes as the magnetic moment of one electrode (the storage layer) in the MJT switches direction. The switching of the magnetic moment is assisted by a phase transition interlayer that transitions from antiferromagnetic to ferromagnetic at a well defined, above ambient temperature.
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US Patent 07826258 Crossbar diode-switched magnetoresistive random access memory system US Patent 7826258 Crossbar diode-switched magnetoresistive random access memory system
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Patent Number
0782625800
Patent Number
782625800
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Official Website
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Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
078262580
Date of Patent
November 2, 2010
0Patent Application Number
120790360
Date Filed
March 24, 2008
0Official Website
Patent Primary Examiner
Edits on 23 Sep, 2022
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Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
078262580
Date of Patent
November 2, 2010
0Patent Application Number
120790360
Date Filed
March 24, 2008
0Official Website
Patent Primary Examiner
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US Patent 07826258 Crossbar diode-switched magnetoresistive random access memory system
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
07826258
Date of patent
November 2, 2010
Patent application number
12079036
Date Filed
March 24, 2008
Patent primary examiner
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