Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Seiji Ohno0
Date of Patent
November 16, 2010
0Patent Application Number
123948500
Date Filed
February 27, 2009
0Patent Primary Examiner
Patent abstract
A light-emitting element including a light-emitting thyristor and a Schottky barrier diode is provided. A Schottky barrier diode is formed by contacting a metal terminal to a gate layer of a three-terminal light-emitting thyristor consisting of a PNPN-structure. A self-scanning light-emitting element array may be driven at 3.0V by using such a Schottky barrier diode as a coupling diode of a diode-coupled self-scanning light-emitting element array.
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