US Patent 7834363 Light-emitting element having PNPN-structure and light-emitting element array
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Patent abstract
A light-emitting element including a light-emitting thyristor and a Schottky barrier diode is provided. A Schottky barrier diode is formed by contacting a metal terminal to a gate layer of a three-terminal light-emitting thyristor consisting of a PNPN-structure. A self-scanning light-emitting element array may be driven at 3.0V by using such a Schottky barrier diode as a coupling diode of a diode-coupled self-scanning light-emitting element array.
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Patent Inventor Names
Seiji Ohno0
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Official Website
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US Patent 07834363 Light-emitting element having PNPN-structure and light-emitting element array US Patent 7834363 Light-emitting element having PNPN-structure and light-emitting element array
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Patent Number
078343630
Patent Number
78343630
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Patent Jurisdiction
Patent Number
078343630
Date of Patent
November 16, 2010
0Patent Application Number
123948500
Date Filed
February 27, 2009
0Official Website
Patent Primary Examiner
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US Patent 07834363 Light-emitting element having PNPN-structure and light-emitting element array
Infobox
Is a
Patent jurisdiction
Patent number
07834363
Date of patent
November 16, 2010
Patent application number
12394850
Date Filed
February 27, 2009
Patent primary examiner
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