Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Jong-Ryeol Yoo0
Deok-Hyung Lee0
Si-Young Choi0
Sun-Ghil Lee0
Date of Patent
November 30, 2010
0Patent Application Number
120000710
Date Filed
December 7, 2007
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A FinFET may include a semiconductor fin having a top surface and a sidewall having different crystal planes. A gate dielectric layer on the top surface and on the sidewall has different thicknesses. A gate electrode is formed on the gate dielectric layer across the top surface and sidewall of the semiconductor fin.
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