US Patent 7842566 FinFET and method of manufacturing the same
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Patent abstract
A FinFET may include a semiconductor fin having a top surface and a sidewall having different crystal planes. A gate dielectric layer on the top surface and on the sidewall has different thicknesses. A gate electrode is formed on the gate dielectric layer across the top surface and sidewall of the semiconductor fin.
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Patent Inventor Names
Deok-Hyung Lee0
Jong-Ryeol Yoo0
Si-Young Choi0
Sun-Ghil Lee0
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US Patent 07842566 FinFET and method of manufacturing the same US Patent 7842566 FinFET and method of manufacturing the same
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Patent Number
078425660
Patent Number
78425660
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Patent Jurisdiction
Patent Number
078425660
Date of Patent
November 30, 2010
0Patent Application Number
120000710
Date Filed
December 7, 2007
0Official Website
Patent Primary Examiner
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US Patent 07842566 FinFET and method of manufacturing the same
Infobox
Is a
Patent jurisdiction
Patent number
07842566
Date of patent
November 30, 2010
Patent application number
12000071
Date Filed
December 7, 2007
Patent primary examiner
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