Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
December 7, 2010
Patent Application Number
11807911
Date Filed
May 30, 2007
Patent Primary Examiner
Patent abstract
A method and structure of providing a doped plug to improve the performance of CCD gaps is discussed. A highly-doped region is implemented in a semiconductor, aligned beneath a gap. The plug provides a highly-conductive region at the semiconductor surface, therefore preventing the development of a region where potential is significantly influenced by surface charges.
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