US Patent 7846760 Doped plug for CCD gaps
Patent 7846760 was granted and assigned to Kenet on December, 2010 by the United States Patent and Trademark Office.
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Patent abstract
A method and structure of providing a doped plug to improve the performance of CCD gaps is discussed. A highly-doped region is implemented in a semiconductor, aligned beneath a gap. The plug provides a highly-conductive region at the semiconductor surface, therefore preventing the development of a region where potential is significantly influenced by surface charges.
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US Patent 07846760 Doped plug for CCD gaps US Patent 7846760 Doped plug for CCD gaps
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Patent Number
0784676000
Patent Number
784676000
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Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
078467600
Date of Patent
December 7, 2010
0Patent Application Number
118079110
Date Filed
May 30, 2007
0Official Website
Patent Primary Examiner
Edits on 27 Sep, 2022
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Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
078467600
Date of Patent
December 7, 2010
0Patent Application Number
118079110
Date Filed
May 30, 2007
0Official Website
Patent Primary Examiner
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US Patent 07846760 Doped plug for CCD gaps
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
07846760
Date of patent
December 7, 2010
Patent application number
11807911
Date Filed
May 30, 2007
Patent primary examiner
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