Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
December 28, 2010
Patent Application Number
11402039
Date Filed
April 11, 2006
Patent Citations Received
Patent Primary Examiner
Patent abstract
Merged P-i-N Schottky device in which the oppositely doped diffusions extend to a depth and have been spaced apart such that the device is capable of absorbing a reverse avalanche energy comparable to a Fast Recovery Epitaxial Diode having a comparatively deeper oppositely doped diffusion region.
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