Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
January 4, 2011
Patent Application Number
11747105
Date Filed
May 10, 2007
Patent Citations Received
Patent Primary Examiner
Patent abstract
A method of forming a dielectric layer includes providing a substrate that has a copper region and a non-copper region. The substrate is etched to remove any copper oxides from the copper region. A dielectric cap is then selectively formed over the copper region of the substrate so that little or no dielectric cap is formed over the non-copper region of the substrate.
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