US Patent 7863196 Self-aligned dielectric cap
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Patent abstract
A method of forming a dielectric layer includes providing a substrate that has a copper region and a non-copper region. The substrate is etched to remove any copper oxides from the copper region. A dielectric cap is then selectively formed over the copper region of the substrate so that little or no dielectric cap is formed over the non-copper region of the substrate.
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US Patent 07863196 Self-aligned dielectric cap US Patent 7863196 Self-aligned dielectric cap
Infobox
Patent Number
0786319600
Patent Number
786319600
Edits on 23 Mar, 2023
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Infobox
Is a
Patent Jurisdiction
Patent Number
078631960
Date of Patent
January 4, 2011
0Patent Application Number
117471050
Date Filed
May 10, 2007
0Official Website
Patent Primary Examiner
Edits on 23 Sep, 2022
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Infobox
Is a
Patent Jurisdiction
Patent Number
078631960
Date of Patent
January 4, 2011
0Patent Application Number
117471050
Date Filed
May 10, 2007
0Official Website
Patent Primary Examiner
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US Patent 07863196 Self-aligned dielectric cap
Infobox
Is a
Patent jurisdiction
Patent number
07863196
Date of patent
January 4, 2011
Patent application number
11747105
Date Filed
May 10, 2007
Patent primary examiner
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