Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Yi Ma0
Khaled Z. Ahmed0
Pravin K. Narwankar0
Shreyas S. Kher0
Date of Patent
January 18, 2011
0Patent Application Number
120571130
Date Filed
March 27, 2008
0Patent Primary Examiner
Patent abstract
Processes for making a high K (dielectric constant) film using an ultra-high purity hafnium containing organometallic compound are disclosed. Also described are devices incorporating high K films made with high purity hafnium containing organometallic compounds.
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