Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Rongming Chu0
Yifeng Wu0
Date of Patent
February 8, 2011
0Patent Application Number
123682480
Date Filed
February 9, 2009
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A III-nitride based high electron mobility transistor is described that has a gate-connected grounded field plate. The gate-connected grounded field plate device can minimize the Miller capacitance effect. The transistor can be formed as a high voltage depletion mode transistor and can be used in combination with a low voltage enhancement-mode transistor to form an assembly that operates as a single high voltage enhancement mode transistor.
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