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US Patent 7884394 III-nitride devices and circuits

Patent 7884394 was granted and assigned to Transphorm Inc. on February, 2011 by the United States Patent and Trademark Office.

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Patent Citations Received
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US Patent 12074150 Module configurations for integrated III-nitride devices
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US Patent 11973138 N-polar devices including a depleting layer with improved conductivity
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Patent abstract

A III-nitride based high electron mobility transistor is described that has a gate-connected grounded field plate. The gate-connected grounded field plate device can minimize the Miller capacitance effect. The transistor can be formed as a high voltage depletion mode transistor and can be used in combination with a low voltage enhancement-mode transistor to form an assembly that operates as a single high voltage enhancement mode transistor.

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Patent Inventor Names
Rongming Chu0
Yifeng Wu0
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Patent Citations Received
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US Patent 11749656 Module configurations for integrated III-Nitride devices
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US Patent 07884394 III-nitride devices and circuits US Patent 7884394 III-nitride devices and circuits

Infobox
Patent Number
078843940
Patent Number
78843940
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Official Website
https://pdfpiw.uspto.gov/.piw?Docid=078843940
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Infobox
Is a
Patent
Patent
0
Current Assignee
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Transphorm Inc.
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
078843940
Date of Patent
February 8, 2011
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Patent Application Number
123682480
Date Filed
February 9, 2009
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Official Website
https://pdfpiw.uspto.gov/.piw?Docid=078843940
Patent Primary Examiner
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Mark Prenty
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Website URL
https://pdfpiw.uspto.gov/.piw?Docid=07884394
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 US Patent 07884394 III-nitride devices and circuits

Infobox
Is a
Patent
Patent
Current assignee
‌
Transphorm Inc.
Patent jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent number
07884394
Date of patent
February 8, 2011
Patent application number
12368248
Date Filed
February 9, 2009
Patent primary examiner
‌
Mark Prenty

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