US Patent 7892367 Tantalum sputtering target
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Patent abstract
A tantalum sputtering target, wherein when the sum of the overall crystalline orientation is 1 on a tantalum target surface, the area ratio of crystals having any orientation among (100), (111), (110) does not exceed 0.5. Thus, obtained is a tantalum sputtering target having superior deposition properties where the deposition speed is high, film evenness (uniformity) is superior, and generation of arcings or particles is reduced.
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Patent Inventor Names
Kunihiro Oda0
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US Patent 07892367 Tantalum sputtering target US Patent 7892367 Tantalum sputtering target
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Patent Number
078923670
Patent Number
78923670
Edits on 28 Sep, 2022
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Patent Jurisdiction
Patent Number
078923670
Date of Patent
February 22, 2011
0Patent Application Number
105722520
Date Filed
October 20, 2004
0Official Website
Patent Primary Examiner
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US Patent 07892367 Tantalum sputtering target
Infobox
Is a
Patent jurisdiction
Patent number
07892367
Date of patent
February 22, 2011
Patent application number
10572252
Date Filed
October 20, 2004
Patent primary examiner
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