Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
March 1, 2011
Patent Application Number
11910983
Date Filed
April 7, 2006
Patent Citations Received
Patent Primary Examiner
Patent abstract
A film forming method is characterized in that the method is provided with a step of introducing a processing gas including inorganic silane gas into a processing chamber, in which a mounting table composed of ceramics including a metal oxide is arranged, and precoating an inner wall of the processing chamber including a surface of the mounting table with a silicon-containing nonmetal thin film; a step of mounting a substrate to be processed on the mounting table precoated with the nonmetal thin film; and a step of introducing a processing gas including organic silane gas into the processing chamber, and forming a silicon-containing nonmetal thin film on a surface of the substrate mounted on the mounting table.
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