US Patent 7897473 Method of manufacturing a dual contact trench capacitor
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Patent abstract
A method of manufacturing a dual contact trench capacitor is provided. The method includes forming a first plate provided within a trench and isolated from a wafer body by a first insulator layer formed in the trench. The method further includes forming a second plate provided within the trench and isolated from the wafer body and the first plate by a second insulator layer formed in the trench.
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US Patent 07897473 Method of manufacturing a dual contact trench capacitor US Patent 7897473 Method of manufacturing a dual contact trench capacitor
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Patent Number
0789747300
Patent Number
789747300
Edits on 19 May, 2023
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Official Website
Edits on 27 Apr, 2023
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Infobox
Is a
Patent Jurisdiction
Patent Number
078974730
Date of Patent
March 1, 2011
0Patent Application Number
121813350
Date Filed
July 29, 2008
0Official Website
Patent Primary Examiner
Edits on 27 Sep, 2022
Golden AI
Infobox
Is a
Patent Jurisdiction
Patent Number
078974730
Date of Patent
March 1, 2011
0Patent Application Number
121813350
Date Filed
July 29, 2008
0Official Website
Patent Primary Examiner
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US Patent 07897473 Method of manufacturing a dual contact trench capacitor
Infobox
Is a
Patent jurisdiction
Patent number
07897473
Date of patent
March 1, 2011
Patent application number
12181335
Date Filed
July 29, 2008
Patent primary examiner
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