Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
March 1, 2011
Patent Application Number
11747444
Date Filed
May 11, 2007
Patent Primary Examiner
Patent abstract
A method for fabricating a semiconductor device, in which a lifting phenomenon can be prevented from occurring in forming an amorphous carbon film on an etched layer having tensile stress. According to the invention, since a compression stress on the etched layer or the amorphous carbon film can be reduced or a compression stress film is formed between the etched layer or the amorphous carbon film to prevent a lifting phenomenon from occurring and thus another pattern can be formed to fabricate a highly integrated semiconductor device.
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