Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Naoki Takeguchi0
Takayuki Enda0
Tatsuya Inoue0
Date of Patent
March 8, 2011
0Patent Application Number
121953070
Date Filed
August 20, 2008
0Patent Citations Received
Patent Primary Examiner
Patent abstract
Devices and methods for plasma treated metal silicide layer formation are disclosed. In one embodiment, a method for manufacturing a semiconductor device comprises forming a metal layer on a silicon substrate, exposing the metal layer to a plasma, and thermally treating the silicon substrate and the metal layer to form a metal silicide layer.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
