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US Patent 7902056 Plasma treated metal silicide layer formation

Patent 7902056 was granted and assigned to Spansion on March, 2011 by the United States Patent and Trademark Office.

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Patent Citations Received
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US Patent 11854881 Method of making a metal silicide contact to a silicon substrate
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Patent abstract

Devices and methods for plasma treated metal silicide layer formation are disclosed. In one embodiment, a method for manufacturing a semiconductor device comprises forming a metal layer on a silicon substrate, exposing the metal layer to a plasma, and thermally treating the silicon substrate and the metal layer to form a metal silicide layer.

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Patent Inventor Names
Naoki Takeguchi0
Takayuki Enda0
Tatsuya Inoue0
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US Patent 07902056 Plasma treated metal silicide layer formation US Patent 7902056 Plasma treated metal silicide layer formation

Infobox
Patent Number
079020560
Patent Number
79020560
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Official Website
https://pdfpiw.uspto.gov/.piw?Docid=079020560
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Infobox
Is a
Patent
Patent
0
Current Assignee
Spansion
Spansion
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
079020560
Date of Patent
March 8, 2011
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Patent Application Number
121953070
Date Filed
August 20, 2008
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Official Website
https://pdfpiw.uspto.gov/.piw?Docid=079020560
Patent Primary Examiner
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Zandra Smith
0
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Website URL
https://pdfpiw.uspto.gov/.piw?Docid=07902056
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 US Patent 07902056 Plasma treated metal silicide layer formation

Infobox
Is a
Patent
Patent
Current assignee
Spansion
Spansion
Patent jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent number
07902056
Date of patent
March 8, 2011
Patent application number
12195307
Date Filed
August 20, 2008
Patent primary examiner
‌
Zandra Smith

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