US Patent 7902099 Dielectric layers and memory cells including metal-doped alumina

Patent 7902099 was granted and assigned to Micron Technology on March, 2011 by the United States Patent and Trademark Office.

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Patent

Patent attributes

Current Assignee

Micron Technology

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

79020990

Patent Inventor Names

Brian A. Vaartstra0

Date of Patent

March 8, 2011

Patent Application Number

127257530

Date Filed

March 17, 2010

Patent Primary Examiner

‌

Karl E Group

Patent abstract

A method of forming (and an apparatus for forming) a metal-doped aluminum oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process.

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