US Patent 7902099 Dielectric layers and memory cells including metal-doped alumina
Patent 7902099 was granted and assigned to Micron Technology on March, 2011 by the United States Patent and Trademark Office.
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Patent abstract
A method of forming (and an apparatus for forming) a metal-doped aluminum oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process.
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Patent Inventor Names
Brian A. Vaartstra0
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Official Website
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US Patent 07902099 Dielectric layers and memory cells including metal-doped alumina US Patent 7902099 Dielectric layers and memory cells including metal-doped alumina
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Patent Number
079020990
Patent Number
79020990
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Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
079020990
Date of Patent
March 8, 2011
0Patent Application Number
127257530
Date Filed
March 17, 2010
0Official Website
Patent Primary Examiner
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US Patent 07902099 Dielectric layers and memory cells including metal-doped alumina
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
07902099
Date of patent
March 8, 2011
Patent application number
12725753
Date Filed
March 17, 2010
Patent primary examiner
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