US Patent 7927970 Producing SOI structure using high-purity ion shower
Patent 7927970 was granted and assigned to Corning Incorporated on April, 2011 by the United States Patent and Trademark Office.
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Patent abstract
Disclosed are methods for making SOI and SOG structures using purified ion shower for implanting ions to the donor substrate. The purified ion shower provides expedient, efficient, low-cost and effective ion implantation while minimizing damage to the exfoliation film.
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Patent Inventor Names
Jeffrey Scott Cites0
Kishor Purushottam Gadkaree0
Richard Orr Maschmeyer0
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US Patent 07927970 Producing SOI structure using high-purity ion shower US Patent 7927970 Producing SOI structure using high-purity ion shower
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Patent Number
07927970
Patent Number
7927970
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US Patent 07927970 Producing SOI structure using high-purity ion shower
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Is a
Current assignee
Patent jurisdiction
Patent number
07927970
Date of patent
April 19, 2011
Patent application number
12369485
Date Filed
February 11, 2009
Patent primary examiner
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