Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Mou-Shiung Lin0
Date of Patent
April 19, 2011
Patent Application Number
12019635
Date Filed
January 25, 2008
Patent Citations Received
Patent Primary Examiner
Patent abstract
A new method is provided for the creation of interconnect lines. Fine line interconnects are provided in a first layer of dielectric overlying semiconductor circuits that have been created in or on the surface of a substrate. A layer of passivation is deposited over the layer of dielectric, a thick second layer of dielectric is created over the surface of the layer of passivation. Thick and wide interconnect lines are created in the thick second layer of dielectric. The first layer of dielectric may also be eliminated, creating the wide thick interconnect network on the surface of the layer of passivation that has been deposited over the surface of a substrate.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.