Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
April 26, 2011
Patent Application Number
10362973
Date Filed
September 5, 2001
Patent Primary Examiner
Patent abstract
A dry etching gas that comprises a compound having a CF3CF fragment directly bonded to a double bond (provided that the compound is exclusive of CF3CF═CFCF═CF2). Said dry etching gas permits the formation of a pattern such as a contact hole with a high aspect ratio.
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