US Patent 7931820 Dry etching gas and method for dry etching
Patent 7931820 was granted and assigned to Daikin Industries, Ltd. on April, 2011 by the United States Patent and Trademark Office.
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Patent abstract
A dry etching gas that comprises a compound having a CF3CF fragment directly bonded to a double bond (provided that the compound is exclusive of CF3CF═CFCF═CF2). Said dry etching gas permits the formation of a pattern such as a contact hole with a high aspect ratio.
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US Patent 07931820 Dry etching gas and method for dry etching US Patent 7931820 Dry etching gas and method for dry etching
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Patent Number
0793182000
Patent Number
793182000
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Is a
Current Assignee
Patent Jurisdiction
Patent Number
079318200
Date of Patent
April 26, 2011
0Patent Application Number
103629730
Date Filed
September 5, 2001
0Official Website
Patent Primary Examiner
Edits on 26 Sep, 2022
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Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
079318200
Date of Patent
April 26, 2011
0Patent Application Number
103629730
Date Filed
September 5, 2001
0Official Website
Patent Primary Examiner
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US Patent 07931820 Dry etching gas and method for dry etching
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
07931820
Date of patent
April 26, 2011
Patent application number
10362973
Date Filed
September 5, 2001
Patent primary examiner
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