Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Brian A. Vaartstra0
Date of Patent
May 17, 2011
0Patent Application Number
119691820
Date Filed
January 3, 2008
0Patent Primary Examiner
Patent abstract
A method of forming (and apparatus for forming) tantalum silicide layers (including tantalum silicon nitride layers), which are typically useful as diffusion barrier layers, on a substrate by using a vapor deposition process with a tantalum halide precursor compound, a silicon precursor compound, and an optional nitrogen precursor compound.
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