US Patent 7943501 Systems and methods of forming tantalum silicide layers
Patent 7943501 was granted and assigned to Micron Technology on May, 2011 by the United States Patent and Trademark Office.
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Patent abstract
A method of forming (and apparatus for forming) tantalum silicide layers (including tantalum silicon nitride layers), which are typically useful as diffusion barrier layers, on a substrate by using a vapor deposition process with a tantalum halide precursor compound, a silicon precursor compound, and an optional nitrogen precursor compound.
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Patent Inventor Names
Brian A. Vaartstra0
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US Patent 07943501 Systems and methods of forming tantalum silicide layers US Patent 7943501 Systems and methods of forming tantalum silicide layers
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Patent Number
079435010
Patent Number
79435010
Edits on 5 Apr, 2023
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Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
079435010
Date of Patent
May 17, 2011
0Patent Application Number
119691820
Date Filed
January 3, 2008
0Patent Primary Examiner
Edits on 7 Dec, 2021
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US Patent 07943501 Systems and methods of forming tantalum silicide layers
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
07943501
Date of patent
May 17, 2011
Patent application number
11969182
Date Filed
January 3, 2008
Patent primary examiner
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