Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
May 31, 2011
Patent Application Number
12436888
Date Filed
May 7, 2009
Patent Primary Examiner
Patent abstract
A semiconductor device in which both an IGBT element region and a diode element region exist in the same semiconductor substrate includes a low lifetime region, which is formed in at least a part of a drift layer within the diode element region and shortens the lifetime of holes. A mean value of the lifetime of holes in the drift layer that includes the low lifetime region is shorter within the IGBT element region than within the diode element region.
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