US Patent 7952143 Semiconductor device having IGBT and diode
Patent 7952143 was granted and assigned to Toyota on May, 2011 by the United States Patent and Trademark Office.
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Patent abstract
A semiconductor device in which both an IGBT element region and a diode element region exist in the same semiconductor substrate includes a low lifetime region, which is formed in at least a part of a drift layer within the diode element region and shortens the lifetime of holes. A mean value of the lifetime of holes in the drift layer that includes the low lifetime region is shorter within the IGBT element region than within the diode element region.
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US Patent 07952143 Semiconductor device having IGBT and diode US Patent 7952143 Semiconductor device having IGBT and diode
Infobox
Patent Number
0795214300
Patent Number
795214300
Edits on 25 Apr, 2023
Golden AI
Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
079521430
Date of Patent
May 31, 2011
0Patent Application Number
124368880
Date Filed
May 7, 2009
0Patent Primary Examiner
Edits on 23 Sep, 2022
Golden AI
Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
079521430
Date of Patent
May 31, 2011
0Patent Application Number
124368880
Date Filed
May 7, 2009
0Patent Primary Examiner
Edits on 7 Dec, 2021
Golden AI
Edits made to:
Infobox (+8 properties)
US Patent 07952143 Semiconductor device having IGBT and diode
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
07952143
Date of patent
May 31, 2011
Patent application number
12436888
Date Filed
May 7, 2009
Patent primary examiner
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