Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
June 7, 2011
Patent Application Number
12031836
Date Filed
February 15, 2008
Patent Primary Examiner
Patent abstract
A semiconductor device having a multilayer wiring structure and a manufacturing method thereof are provided. A semiconductor device and a manufacturing method thereof are provided in which the reliability and the manufacturing yield are high and the design constraint is small. Wirings are formed on a substrate. Low dielectric constant films are formed around the wirings. Reinforcement insulating films are formed in a dielectric material of a larger elastic modulus than that of a formation material of the low dielectric constant films and are arranged to overlap with the wirings when viewed perpendicularly to a substrate surface. Reinforcement insulating films are arranged to intersect with the wirings.
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