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US Patent 7977720 Ferroelectric memory and its manufacturing method

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Date Filed
July 2, 2010
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Date of Patent
July 12, 2011
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Patent Application Number
12829924
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Patent Citations Received
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US Patent 12108608 Memory devices with dual encapsulation layers and methods of fabrication
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US Patent 12022662 Planar and trench capacitors for logic and memory applications and methods of fabrication
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US Patent 12029043 Planar and trench capacitors with hydrogen barrier dielectric for logic and memory applications and methods of fabrication
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US Patent 12069866 Pocket integration process for embedded memory
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US Patent 12108607 Devices with continuous electrode plate and methods of fabrication
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US Patent 11839070 High density dual encapsulation materials for capacitors and methods of fabrication
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US Patent 11839088 Integrated via and bridge electrodes for memory array applications and methods of fabrication
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US Patent 11844203 Conductive and insulative hydrogen barrier layer for memory devices
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US Patent 11844225 Dual hydrogen barrier layer for memory devices integrated with low density film for logic structures and methods of fabrication
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US Patent 11854593 Ferroelectric memory device integrated with a transition electrode
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•••
Patent Inventor Names
Shinichi Fukada
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
7977720
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Patent Primary Examiner
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Zandra Smith
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