Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Yukinobu Hikosaka0
Tomohiro Takamatsu0
Yoshinori Obata0
Date of Patent
July 19, 2011
Patent Application Number
11593018
Date Filed
November 6, 2006
Patent Primary Examiner
Patent abstract
A method for inspecting a semiconductor memory having nonvolatile memory cells using ferroelectric capacitors is disclosed which comprises, after shelf-aging the ferroelectric capacitor in a first polarized state, the steps of: (a) writing a second polarized state opposite to the first polarized state; (b) shelf-aging the ferroelectric capacitor in the second polarized state; and (c) reading the second polarized state. The temperature or voltage in the step (a) is lower than the temperature or voltage in the step (c). This method for inspecting a semiconductor memory enables to evaluate the imprint characteristics in a short time.
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